During the last decade many new concepts have been proposed for
improving the performance of power MOSFETs. The results of this research
are dispersed in the technical literature among journal articles and
abstracts of conferences. Consequently, the information is not readily
available to researchers and practicing engineers in the power device
community. There is no cohesive treatment of the ideas to provide an
assessment of the relative merits of the ideas. "Advanced Power MOSFET
Concepts" provides an in-depth treatment of the physics of operation of
advanced power MOSFETs. Analytical models for explaining the operation
of all the advanced power MOSFETs will be developed. The results of
numerical simulations will be provided to give additional insight into
the device physics and validate the analytical models. The results of
two-dimensional simulations will be provided to corroborate
the analytical models and give greater insight into the device operation.
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